Oxygen pressure dependence of copper ion transport in dielectrics
GIXRD scans of copper oxide films prepared [(a) and (b)] by thermal oxidation of copper and (c) by reactive sputtering. Peak heights are relative to the baseline, which is offset to show the plots more clearly.
XPS spectra for (a) (thermally oxidized), (b) CuO (thermally oxidized), and (c) CuO reactive sputter deposited from a CuO target in oxygen.
Arrhenius plots of copper ion flux at are presented for thermally oxidized and films, and sputter-deposited films.
Arrhenius plots of the copper ion flux in vacuum and at oxygen are presented for samples at several applied voltages.
Oxygen pressure dependence of the copper ion flux is presented for thermally oxidized and films, and sputter-deposited films.
spacings and peak index assignments for scans of Fig. 1.
Crystalline phases and particle size estimates from GIXRD data.
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