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Oxygen pressure dependence of copper ion transport in dielectrics
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10.1116/1.2200372
/content/avs/journal/jvstb/24/3/10.1116/1.2200372
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200372

Figures

Image of FIG. 1.
FIG. 1.

GIXRD scans of copper oxide films prepared [(a) and (b)] by thermal oxidation of copper and (c) by reactive sputtering. Peak heights are relative to the baseline, which is offset to show the plots more clearly.

Image of FIG. 2.
FIG. 2.

XPS spectra for (a) (thermally oxidized), (b) CuO (thermally oxidized), and (c) CuO reactive sputter deposited from a CuO target in oxygen.

Image of FIG. 3.
FIG. 3.

Arrhenius plots of copper ion flux at are presented for thermally oxidized and films, and sputter-deposited films.

Image of FIG. 4.
FIG. 4.

Arrhenius plots of the copper ion flux in vacuum and at oxygen are presented for samples at several applied voltages.

Image of FIG. 5.
FIG. 5.

Oxygen pressure dependence of the copper ion flux is presented for thermally oxidized and films, and sputter-deposited films.

Tables

Generic image for table
TABLE I.

spacings and peak index assignments for scans of Fig. 1.

Generic image for table
TABLE II.

Crystalline phases and particle size estimates from GIXRD data.

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/content/avs/journal/jvstb/24/3/10.1116/1.2200372
2006-05-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen pressure dependence of copper ion transport in SiO2 dielectrics
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200372
10.1116/1.2200372
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