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Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation
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10.1116/1.2200373
/content/avs/journal/jvstb/24/3/10.1116/1.2200373
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200373

Figures

Image of FIG. 1.
FIG. 1.

Variation of sheet resistance of NiSi with temperature on (a) -type Si and (b) -type Si.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM for the hydrogenated sample annealed at [(a) and (b)] and both the hydrogenated and unhydrogenated samples annealed at (c).

Image of FIG. 3.
FIG. 3.

SIMS data for samples annealed at (a) , (b) , (c) , and (d) .

Tables

Generic image for table
TABLE I.

Data obtained from Hall effect measurement on NiSi formed on hydrogenated and unhydrogenated Si substrates. Samples were silicided at .

Generic image for table
TABLE II.

Processing conditions of additional samples and sheet resistance as measured by four-point probe. of Ni was evaporated in all cases.

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/content/avs/journal/jvstb/24/3/10.1116/1.2200373
2006-05-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200373
10.1116/1.2200373
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