Variation of sheet resistance of NiSi with temperature on (a) -type Si and (b) -type Si.
Cross-sectional TEM for the hydrogenated sample annealed at [(a) and (b)] and both the hydrogenated and unhydrogenated samples annealed at (c).
SIMS data for samples annealed at (a) , (b) , (c) , and (d) .
Data obtained from Hall effect measurement on NiSi formed on hydrogenated and unhydrogenated Si substrates. Samples were silicided at .
Processing conditions of additional samples and sheet resistance as measured by four-point probe. of Ni was evaporated in all cases.
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