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Thermally stable heterostructure field-effect transistor with gate electrode
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10.1116/1.2200374
/content/avs/journal/jvstb/24/3/10.1116/1.2200374
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200374
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Forward and reverse characteristics of Ir and Pt Schottky contacts on heterostructure as a function of annealing time: (a) Ir contact and (b) Pt contact.

Image of FIG. 2.
FIG. 2.

Change of Schottky barrier heights of Ir and Pt contacts as a function of annealing time. The annealing temperature was .

Image of FIG. 3.
FIG. 3.

SIMS depth profiles of the Ir Schottky contacts: (a) as-deposited sample and (b) annealed sample at for .

Image of FIG. 4.
FIG. 4.

SIMS depth profiles of the Pt Schottky contacts: (a) as-deposited sample and (b) annealed sample at for .

Image of FIG. 5.
FIG. 5.

Apparent carrier concentration vs penetration depth of Ir and Pt Schottky contacts on heterostructure as a function of annealing time measured by profiling technique: (a) Ir contact and (b) Pt contact.

Image of FIG. 6.
FIG. 6.

Change of characteristics of Ir-gated -wide HFET with a gate length of as a function of annealing time. (Gate bias: from , step: .)

Image of FIG. 7.
FIG. 7.

Change of characteristics of Pt gated -wide HFET with a gate length of as a function of annealing time. (Gate bias: from , step: .)

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/content/avs/journal/jvstb/24/3/10.1116/1.2200374
2006-05-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally stable AlGaN∕GaN heterostructure field-effect transistor with IrO2 gate electrode
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2200374
10.1116/1.2200374
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