Structure of SiLK-D™ showing aromatic rings and oxygen atoms in the structure.
(a) BTS of as-deposited SiLK-D™ at and showing copper injection, (b) at and showing greater copper injection. The higher field pushes in more copper ions.
(a) FTIR of as-deposited and plasma treated SiLK-D™ showing no change between the two, (b) XPS of as-deposited and plasma treated SiLK-D™ showing a sharp increase in the O peak at in plasma treated SiLK-D™ and (c) C core level peaks show a change in bonding between as-deposited and plasma treated SiLK-D™.
(a) BTS of plasma treated SiLK-D™ at and showing more copper injection than as-deposited SiLK-D™ in Fig. 2(b) and (b) plasma treated SiLK-D™ showing a greater shift in flatband voltage than in (a). (c) BTS on plasma treated SiLK-D™ at and showing no shift in the flatband voltage indicating absence of injected copper ions.
Shift in flatband voltages. The data for Pa-n are at and while SiLK-D™ was tested at and .
Plasma treatment conditions.
Thickness and refractive index (RI) measurements.
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