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Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition
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10.1116/1.2201458
/content/avs/journal/jvstb/24/3/10.1116/1.2201458
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2201458
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Growth rate of on Si and Ti on . Thickness ratio of to Ti is also shown at the right axis.

Image of FIG. 2.
FIG. 2.

Redrawing of Fig. 1. The growth curve of Ti is shifted to the left by .

Image of FIG. 3.
FIG. 3.

XRD spectra of phase at (a) different annealing temperatures and (b) different thicknesses. Deposition temperature of CVD Ti was .

Image of FIG. 4.
FIG. 4.

AFM images of interface. The measurement was taken after removal of from Si substrate. (a) at , (b) at , (c) at , and (d) at .

Image of FIG. 5.
FIG. 5.

TEM image of phase between Si substrate and bit line contact plug. The plug material is tungsten and TiN.

Image of FIG. 6.
FIG. 6.

SIMS profiles of B concentration to the distance from the interface. Each symbol denotes the following was implanted and annealed at for , CVD Ti is deposited, CVD Ti is deposited and annealed at for , and PVD Ti is deposited and annealed at for .

Image of FIG. 7.
FIG. 7.

Cumulative probabilities of contact resistance between bit line and -type Si. The contact size is . Each symbol denotes 0.81, 0.99, 1.21, and of CVD Ti and of PVD Ti. All the wafers were annealed at for .

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/content/avs/journal/jvstb/24/3/10.1116/1.2201458
2006-05-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2201458
10.1116/1.2201458
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