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Influence of silicon nitride passivation on transport properties in composite channel high electron mobility transistor structures
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10.1116/1.2209989
/content/avs/journal/jvstb/24/4/10.1116/1.2209989
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/4/10.1116/1.2209989
/content/avs/journal/jvstb/24/4/10.1116/1.2209989
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/content/avs/journal/jvstb/24/4/10.1116/1.2209989
2006-06-28
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scitation|Influence of silicon nitride passivation on transport properties in InAlAs∕InGaAs∕InP composite channel high electron mobility transistor structures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/4/10.1116/1.2209989
10.1116/1.2209989
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