Performance of organic thin-film transistors
Degradation of the mobility in transistors of thicker films and higher gate capacitance per unit area. The sources of the literature data are listed in Table I.
Impact of fabrication processing in pentacene TFTs. Well processed top-contact TFTs (diamonds) (Refs. 5 and 18) coincide with trend line 2. Fabrication processing variations such as oxide surface modification (Ref. 9) (circles), rubber-stamp drain and source electrodes (Ref. 20) (triangle) and epoxy polymer for gate dielectric with a photolithographic lift-off for the drain, and source contacts (Ref. 21) (square) lead to mobility values below the trend line.
Threshold voltage tends to zero in transistors of higher gate capacitance per unit area. The values of are inverted since most of the OTFTs behave as -type field-effect transistors. Data are from Refs. 4, 5, 12, 16, 18, 19, 21, and 23–37.
Subthreshold slope tends to lower values in transistors of higher gate capacitance per unit area.
Lack of dependence between subthreshold slope and on/off ratio.
Mobility in organic transistors—legend and reference to Fig. 1.
Parameters in the trend function of Eq. (1) for the mobility in organic TFTs.
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