characteristics of Schottky diodes deposited at either (left) or (right). An expanded view of the forward voltage part of the curves is shown at the bottom.
Forward current densities as a function of bias for diodes of different diameters deposited at either 77 or .
Reverse current at for diodes deposited at either 77 or , as a function of either contact diameter (top) or area (bottom).
Time dependence of forward bias at a current of for diodes deposited at either 77 or .
Optical microscope images of Au contacts deposited at (left) or (right).
XRR of thin Au layers of GaAs for the two different deposition temperatures and the associated Au surface roughness and interfacial roughness derived from the XRR.
Metals, melting temperature, and recrystallization temperature.
Summary of diode characteristics for deposition of the Au at either 77 or .
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