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III-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy
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10.1116/1.2218860
/content/avs/journal/jvstb/24/4/10.1116/1.2218860
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/4/10.1116/1.2218860
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Figures

Image of FIG. 1.
FIG. 1.

Surface of CLN by AFM (a) before annealing; (b) after furnace annealing in air at for and (c) the same condition with different scale. The surface of by AFM after (d) furnace annealing in air at for , (e) , and (f) .

Image of FIG. 2.
FIG. 2.

Surface of SLN by AFM for (a) as-received and (b) after furnace annealing in air at for and (c) for .

Image of FIG. 3.
FIG. 3.

AFM morphologies of (a) etched, as-received CLN without furnace annealing and outgassing in vacuum. (b) Etched and furnace annealed LN. (c) Etched and outgassed in vacuum only. (d) Etched as-received SLN without furnace annealing and outgassing in vacuum. (e) Etched and furnace annealed LN and (f) etched and outgassed in vacuum only.

Image of FIG. 4.
FIG. 4.

Ellipsometric spectra of the pseudorefractive index, , and pseudoextinction coefficient, , of CLN (cross) and SLN (circles) substrates before any treatment.

Image of FIG. 5.
FIG. 5.

Time variation of the pseudorefractive index, , and pseudoextinction coefficient, , during annealing in vacuum at various temperatures in the range of with an increment of for CLN and SLN. The different initial point is because of the different temperatures investigated.

Image of FIG. 6.
FIG. 6.

Ellipsometric spectra of the pseudorefractive index, , and pseudoextinction coefficient, , of (a) CLN and (b) SLN substrates before (BA) and after (AA) annealing at for approximately . Real time ellipsometric measurements are at photon energy.

Image of FIG. 7.
FIG. 7.

In situ RHEED patterns on (a) CLN at , (b) CLN at , (c) nitrides on CLN at , (d) SLN at , and (e) nitrides on SLN at .

Image of FIG. 8.
FIG. 8.

X-ray diffraction spectra of HEMT structure. Upper: CLN; lower: SLN showing that SLN has lower intensity of x-ray diffraction peak of .

Image of FIG. 9.
FIG. 9.

(a) Surface morphology and (b) surface potential measurement of on CLN by AFM and surface potential EFM. (c) Surface morphology and (d) surface potential on SLN show smoother surface and no inversion domains.

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/content/avs/journal/jvstb/24/4/10.1116/1.2218860
2006-07-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: III-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/4/10.1116/1.2218860
10.1116/1.2218860
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