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Epitaxial diodes via electrodeposition
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Image of FIG. 1.
FIG. 1.

Schematic diagram showing a projection of a possible atomic arrangement looking parallel the Bi lattice vector (or a GaAs ⟨110⟩ direction). The Bi unit cell is indicated together with the 15.8° rotated, Bi plane.

Image of FIG. 2.
FIG. 2.

X-ray diffraction spectra of Bi films ( thick) electrodeposited from saturated and solutions at on GaAs (a) , (b) (001), and (c) (011) oriented substrates.

Image of FIG. 3.
FIG. 3.

A cross-sectional TEM image and corresponding selected area diffraction pattern of obtained with the electron beam aligned with the ⟨110⟩ substrate direction. The Bi is single crystalline with the Bi (0001) growth orientation parallel to the GaAs planes and Bi planes parallel to GaAs {110}.

Image of FIG. 4.
FIG. 4.

A plan-view TEM selected area diffraction pattern of (001). The Bi (out of plane) growth direction is (0001) with the Bi planes parallel to one set of GaAs {110} planes.

Image of FIG. 5.
FIG. 5.

Secondary electron scanning electron microscopy images of Bi films electrodeposited on GaAs (111), (001), and (011) substrates.

Image of FIG. 6.
FIG. 6.

Typical room temperature (a) current vs voltage and (b)Schottky-Mott plots, reciprocal of the area-normalized capacitance vs applied reverse bias of diodes as a function of substrate orientation: (110), (111), and (100) curves are plotted using symbols (∎), (●), and (▴), respectively. Diode areas are 0.93, 0.44, and , respectively.


Generic image for table

A summary of the electrical characteristics of diodes as a function of substrate orientation including barrier heights and corresponding ideality factor determined from therionic-emission theory; barrier heights barrier heights and average doping concentration determined via Schottky-Mott plots of vs reverse bias voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial Bi∕GaAs diodes via electrodeposition