(a) SEM image of 9.4 ML selective Ge deposition upon HF etched patterned pores. Inset are representative, higher resolution SEM images from the same sample that have been digitally enhanced to increase the contrast showing (i) an empty pore, (ii) a singlet, and (iii) a doublet. (b) Ge XPS peak data confirming selective deposition: (1) Baseline on unpatterned (2) after 9.4 ML deposition on unpatterned (3) 9.4 ML Ge deposited on patterned surface with HF etch (4) 7.5 ML Ge exposure upon unpatterned surface. (c) SEM image of selective Ge deposition upon HF etched patterned sample after 0.4 ML room temperature seeding followed with a 9.0 ML exposure at .
(a) Plot of Ge nanoparticle density vs Ge exposure for (●) and (▴) HF etched patterned samples, and unpatterned (*). The horizontal line indicates the patterned pore density of . (b) SEM image of 15 ML Ge deposition on an unpatterned surface.
Comparison of (a) large , (b) medium , and (c) small sized nanoparticles as a function of Ge exposure for the HF etched pores.
(a) SEM images demonstrating relative nanoparticle placement in a given pore on a HF etched patterned sample. The left image is edge placement, center image is center placement, and right image is two particles in one pore (doublet). (b) The plot of nanoparticle placement represented as the ratio of edge/center vs Ge exposure for 1 and HF etched patterned pores counting only pores with one nanoparticle present (singlet).
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