1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
Rent:
Rent this article for
USD
10.1116/1.2244540
/content/avs/journal/jvstb/24/5/10.1116/1.2244540
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2244540

Figures

Image of FIG. 1.
FIG. 1.

characteristics of -thick NiO films as a function of oxygen content; (a) 5%, (b) 10%, (c) 16.7%, and (d) 20% oxygen content.

Image of FIG. 2.
FIG. 2.

Resistance variation of the NiO films at the off state as a function of oxygen content. Resistance values were measured at .

Image of FIG. 3.
FIG. 3.

XRD patterns of the NiO films as a function of oxygen content; (a) 5%, (b) 10%, (c) 16.7%, and (d) 20% oxygen content.

Image of FIG. 4.
FIG. 4.

Cross-sectional FESEM image of the NiO film grown at a 16.7% oxygen content.

Image of FIG. 5.
FIG. 5.

(a) Set and (b) reset voltage variations of NiO films with a 10% oxygen content as a function of measuring temperature. Measuring temperature was varied from .

Tables

Generic image for table
TABLE I.

Depostion conditions.

Loading

Article metrics loading...

/content/avs/journal/jvstb/24/5/10.1116/1.2244540
2006-09-15
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2244540
10.1116/1.2244540
SEARCH_EXPAND_ITEM