Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
characteristics of -thick NiO films as a function of oxygen content; (a) 5%, (b) 10%, (c) 16.7%, and (d) 20% oxygen content.
Resistance variation of the NiO films at the off state as a function of oxygen content. Resistance values were measured at .
XRD patterns of the NiO films as a function of oxygen content; (a) 5%, (b) 10%, (c) 16.7%, and (d) 20% oxygen content.
Cross-sectional FESEM image of the NiO film grown at a 16.7% oxygen content.
(a) Set and (b) reset voltage variations of NiO films with a 10% oxygen content as a function of measuring temperature. Measuring temperature was varied from .
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