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Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
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10.1116/1.2244540
/content/avs/journal/jvstb/24/5/10.1116/1.2244540
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2244540
/content/avs/journal/jvstb/24/5/10.1116/1.2244540
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/content/avs/journal/jvstb/24/5/10.1116/1.2244540
2006-09-15
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2244540
10.1116/1.2244540
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