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Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
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10.1116/1.2345205
/content/avs/journal/jvstb/24/5/10.1116/1.2345205
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2345205
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram for the PE-ALD system.

Image of FIG. 2.
FIG. 2.

Growth rate of thermal and PE-ALD as a function of water exposure time on Si(100) substrate at .

Image of FIG. 3.
FIG. 3.

Growth rate of PE-ALD and TaN as a function of growth temperature on Si(100) substrates.

Image of FIG. 4.
FIG. 4.

X-ray diffraction spectra of the thermal ALD films deposited at 250, 350, and on Si(100) substrate. Also shown is the XRD spectrum of the film deposited at followed by annealing at .

Image of FIG. 5.
FIG. 5.

XPS spectra of (a) Ta , (b) O , and (c) N for thermal ALD from PDMAT reacting with water at 150, 250, and .

Image of FIG. 6.
FIG. 6.

RBS data for PE-ALD film with thickness. The growth temperature was .

Image of FIG. 7.
FIG. 7.

XPS spectra of (a) Ta , (b) O , and (c) N for thermal ALD from PDMAT reacting with .

Image of FIG. 8.
FIG. 8.

Illustrations showing the reaction schemes for (a) TaN and (b) PE-ALD.

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/content/avs/journal/jvstb/24/5/10.1116/1.2345205
2006-09-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2345205
10.1116/1.2345205
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