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Plasma doping implant depth profile calculation based on ion energy distribution measurementsa)
a)No proof corrections received from author prior to publication.
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10.1116/1.2353841
/content/avs/journal/jvstb/24/5/10.1116/1.2353841
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2353841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of PLAD process chamber with ion mass/energy analyzer and a Langmuir probe.

Image of FIG. 2.
FIG. 2.

Cathode voltage and current wave forms for a , , , discharge.

Image of FIG. 3.
FIG. 3.

Evolution during the pulse of the relative total ion flux and , , and ion relative fluxes measured by time resolved mass spectrometry.

Image of FIG. 4.
FIG. 4.

Ratio of sheath thickness over ion mean free path as a function of the pressure for different cathode voltage ( and ). is an estimation of the number of collisions for an ion crossing the high voltage sheath in front of the cathode.

Image of FIG. 5.
FIG. 5.

Cathode current vs relative total ion flux measured with the mass spectrometer for and plasma.

Image of FIG. 6.
FIG. 6.

, , , and IED normalized to the total ion flux for plasma at three different pressures: 30, 50, and .

Image of FIG. 7.
FIG. 7.

, , , and IED normalized to the total ion flux for plasma at four different pressures: 100, 150, 200, and .

Image of FIG. 8.
FIG. 8.

Ion ratio in a plasma with pressure ranging from .

Image of FIG. 9.
FIG. 9.

(a) Boron and fluorine equivalent energies based on the , IED of the ions reaching the wafer. (b) Boron equivalent energy based on the IED of the ions reaching the wafer for a large range of pressure .

Image of FIG. 10.
FIG. 10.

(a) Boron and fluorine predicted depth profiles based on the measured ion mass and energy distribution for crystalline and preamorphized silicon wafer (PAI), compared with the measured SIMS depth profile for the same implant conditions (, PLAD). (b) Boron predicted profile of PLAD at 100, 150, 200, and . (c) Boron predicted depth profile based on the measured ion mass and energy distribution, compared with the measured SIMS depth profile for the same implant conditions (, PLAD).

Image of FIG. 11.
FIG. 11.

(a) Contribution of each ion reaching the wafer (, , , and ) onto the boron depth profile. (b) Contribution of each energy bin (, , , , and ) equivalent boron energy onto the boron depth profile.

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/content/avs/journal/jvstb/24/5/10.1116/1.2353841
2006-09-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma doping implant depth profile calculation based on ion energy distribution measurementsa)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/5/10.1116/1.2353841
10.1116/1.2353841
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