Schematic diagram of PLAD process chamber with ion mass/energy analyzer and a Langmuir probe.
Cathode voltage and current wave forms for a , , , discharge.
Evolution during the pulse of the relative total ion flux and , , and ion relative fluxes measured by time resolved mass spectrometry.
Ratio of sheath thickness over ion mean free path as a function of the pressure for different cathode voltage ( and ). is an estimation of the number of collisions for an ion crossing the high voltage sheath in front of the cathode.
Cathode current vs relative total ion flux measured with the mass spectrometer for and plasma.
, , , and IED normalized to the total ion flux for plasma at three different pressures: 30, 50, and .
, , , and IED normalized to the total ion flux for plasma at four different pressures: 100, 150, 200, and .
Ion ratio in a plasma with pressure ranging from .
(a) Boron and fluorine equivalent energies based on the , IED of the ions reaching the wafer. (b) Boron equivalent energy based on the IED of the ions reaching the wafer for a large range of pressure .
(a) Boron and fluorine predicted depth profiles based on the measured ion mass and energy distribution for crystalline and preamorphized silicon wafer (PAI), compared with the measured SIMS depth profile for the same implant conditions (, PLAD). (b) Boron predicted profile of PLAD at 100, 150, 200, and . (c) Boron predicted depth profile based on the measured ion mass and energy distribution, compared with the measured SIMS depth profile for the same implant conditions (, PLAD).
(a) Contribution of each ion reaching the wafer (, , , and ) onto the boron depth profile. (b) Contribution of each energy bin (, , , , and ) equivalent boron energy onto the boron depth profile.
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