(a) Graphical flowchart for the HSQ image reversal method using CMP. (b) Test pattern in thick HSQ on silicon. (c) Silicon nitride layer after CMP down to a thickness (and a few seconds of BOE dipping). (d) Silicon nitride layer after CMP and full HSQ removal in BOE.
SEM images of (a) test pattern in thick HSQ on silicon, (b) reversed pattern in thick silicon oxide (from boron doped TEOS), (c) bird’s eye view of (b), and (d) the same pattern as in (b) and (c), but here the HSQ has been e-beam written using a lower exposure dose.
Etch rates and selectivities in buffered oxide etch (7:1) at .
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