Area selective atomic layer deposition of titanium dioxide: Effect of precursor chemistry
Schematic of the ALD reactor.
Thickness grown per ALD cycle vs exposure time for one of the ALD precursors. The legend format refers to the time duration of each step in the ALD cycle. For example, refers to an ALD sequence of (1) exposure of , (2) purge, (3) exposure to water, and (4) purge. The two different data sets are for varying the (◻) exposure time and the (◇) water exposure time.
Thickness of the film as a function of the number of ALD cycles. The linear growth with number of cycles is indicative of an ALD process.
C and Ti spectra as obtained from XPS scans on PMMA film post-400 ALD cycles for process.
C and Ti spectra as obtained from XPS scans on PMMA film post-500 ALD cycles for process.
Comparison of XPS spectra showing the Ti peak on a silicon substrate surface after 500 ALD cycles using the precursor system for both surface areas that were covered by a PMMA film and for surface areas that were open directly to the ALD atmosphere. Deposition of titania occurred on the open surface while no visible deposition of Ti or titania occurred under the PMMA masked areas. Optical micrographs displaying different size titania patterns deposited using ASALDT are also shown.
XPS spectra showing the Ti peak measured on the silicon substrate after 100 ALD cycles for different initial thicknesses of the PMMA masking film. The scans were taken after the PMMA film was removed from the silicon wafer. PMMA film thicknesses were (a) , (b) , (c) , (d) , and (e) . The spectra have been shifted vertically along the axis arbitrarily for purposes of separation and clearer representation.
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