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Generalized model of the metal/ Schottky interface and improved performance by electrochemical Pt deposition
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10.1116/1.2359731
/content/avs/journal/jvstb/24/6/10.1116/1.2359731
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2359731

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the role of a NSL in an energy-band diagram of a Schottky interface. For simplicity, the interfacial layer is not shown.

Image of FIG. 2.
FIG. 2.

Typical characteristics of prepared by e-beam evaporation and electrochemical deposition.

Image of FIG. 3.
FIG. 3.

Calculated carrier concentration of the large evaporated and the large electroplated contacts vs the width of the depletion region.

Image of FIG. 4.
FIG. 4.

Observed hysteresis behavior and a current shoulder in the relationship of an evaporated Schottky contact. Arrows indicate the direction of bias changing.

Tables

Generic image for table
TABLE I.

Typical dc characteristics of fabricated GaN Schottky diodes. Values of and of evaporated contacts are not reliable because their relationships do not correspond to TFE theory.

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/content/avs/journal/jvstb/24/6/10.1116/1.2359731
2006-10-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Generalized model of the metal/n-GaN Schottky interface and improved performance by electrochemical Pt deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2359731
10.1116/1.2359731
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