Schematic representation of the role of a NSL in an energy-band diagram of a Schottky interface. For simplicity, the interfacial layer is not shown.
Typical characteristics of prepared by e-beam evaporation and electrochemical deposition.
Calculated carrier concentration of the large evaporated and the large electroplated contacts vs the width of the depletion region.
Observed hysteresis behavior and a current shoulder in the relationship of an evaporated Schottky contact. Arrows indicate the direction of bias changing.
Typical dc characteristics of fabricated GaN Schottky diodes. Values of and of evaporated contacts are not reliable because their relationships do not correspond to TFE theory.
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