1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Chemical lithography
Rent:
Rent this article for
USD
10.1116/1.2359732
/content/avs/journal/jvstb/24/6/10.1116/1.2359732
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2359732
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM micrographs of resist structures formed by catalyzing the cross-link reaction of AZ5214-E resist using liquid HCl. The acid is first spread on the resist surface. The sample is then baked at for . Since AZ5214 is originally a positive photoresist, we need an additional flood exposure to reverse the tone, known in literature as image reversal process. The resist is finally developed after the flood exposure.

Image of FIG. 2.
FIG. 2.

Positive process of chemical lithography.

Image of FIG. 3.
FIG. 3.

Negative process of chemical lithography.

Image of FIG. 4.
FIG. 4.

Comparison of experimental results of positive and negative processes. The left column shows SEM micrographs of resist structures achieved using positive process. The right column shows SEM micrographs of the resist patterns using negative process. Except for the bottom row, these patterns are generated using the same template. Clearly, the structures formed using the positive process are complementary to those formed using the negative process.

Image of FIG. 5.
FIG. 5.

Chemical lithography results of using solid acid. The top shows the SEM micrograph of photonic crystal structures patterned using solid acid. The bottom shows an array of lines with different linewidths. Feature size as small as has been realized.

Image of FIG. 6.
FIG. 6.

Etch result of silicon substrate patterned using chemical lithography.

Image of FIG. 7.
FIG. 7.

SEM micrographs of AFM tips. (a) Solid acid is deposited by physical vapor deposition. (b) Solid acid is synthesized by dip-and-dry method.

Image of FIG. 8.
FIG. 8.

Lithography results obtained with different contact forces: (a) firm contact, (b) moderate contact, and (c) gentle contact. The inset in (c) is the AFM tip that is used for the lithography.

Image of FIG. 9.
FIG. 9.

linewidth realized by using PVD deposited solid acid.

Loading

Article metrics loading...

/content/avs/journal/jvstb/24/6/10.1116/1.2359732
2006-10-31
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2359732
10.1116/1.2359732
SEARCH_EXPAND_ITEM