Layer configuration of the pair delta-doped structure and energy diagram. The thicknesses of layers are indicated in parentheses. In the energy diagram and are the Fermi level and mobility edge, respectively, and is the density of states.
Temperature dependence of resistivity of six samples and the Arrhenius plots of sample 3.
Temperature dependence of magnetoresistance of six samples, where with .
Magnetic field dependence of resistance of samples 2, 3, and 5 at three different temperatures.
Plots of the ratio of coefficients of samples 3 and 5 against . Each value of is the average obtained from four independent measurements of magnetoresistance curves.
Be and Si concentrations, room temperature free hole concentration and mobility , localized hole concentration , and energy difference .
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