Mobility and charge density tuning in double -doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition
Schematic diagram of the full and capless double -doped PHEMT heterostructures.
Typical cross sectional TEM microphotograph of the double -doped PHEMT heterostructure with a spacer 1 and a spacer 2 layer thickness of 40 and , respectively.
SIMS profiles of As, Ga, Al, In, and Si in a capless PHEMT heterostructure.
Experimentally observed mobility at room temperature as a function of the sheet carrier concentration with different -doping levels and spacer layer thicknesses in the capless structures. The doping ratio of 2 was fixed at 4:1.
Transfer characteristics of a typical -gate-length PHEMT at with a sheet carrier concentration of and a mobility of .
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