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Mobility and charge density tuning in double -doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition
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10.1116/1.2362783
/content/avs/journal/jvstb/24/6/10.1116/1.2362783
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2362783
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the full and capless double -doped PHEMT heterostructures.

Image of FIG. 2.
FIG. 2.

Typical cross sectional TEM microphotograph of the double -doped PHEMT heterostructure with a spacer 1 and a spacer 2 layer thickness of 40 and , respectively.

Image of FIG. 3.
FIG. 3.

SIMS profiles of As, Ga, Al, In, and Si in a capless PHEMT heterostructure.

Image of FIG. 4.
FIG. 4.

Experimentally observed mobility at room temperature as a function of the sheet carrier concentration with different -doping levels and spacer layer thicknesses in the capless structures. The doping ratio of 2 was fixed at 4:1.

Image of FIG. 5.
FIG. 5.

Transfer characteristics of a typical -gate-length PHEMT at with a sheet carrier concentration of and a mobility of .

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/content/avs/journal/jvstb/24/6/10.1116/1.2362783
2006-11-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2362783
10.1116/1.2362783
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