Schematic drawings of the MIS structures used in this work. MIS-A: Al . MIS-B: Al .
Relative dielectric constant and leakage current of SiCOF films as a function of flow rate.
FTIR spectra of undoped SiCO and doped SiCOF12.
Peak resolution of FTIR from wave numbers of (a) undoped SiCO and (b) doped SiCOF12.
FTIR Peak ratio of , Si–H, and Si–F to Si–O bonds as a function of different flow rates.
(a) Current density-electric field characteristic of MIS-A sample with different content films. (b) Pool-Frenkel model at room temperature.
hysteresis effect at for MIS-A structure of doped SiCO and SiCOF12 sample; (a) sweep voltage of and (b) sweep voltage of .
Dependence of the flatband voltage and on the different contents by sweep voltage of . The inset shows characteristics for the MIS-A structure.
hysteresis effect at for MIS-B structure of doped SiCO and SiCOF12 sample; (a) of sweep voltage of and (b) sweep voltage of .
Comparison of the theoretical value of and experimental value of .
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