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Electrical properties of fluorine-doped silicon-oxycarbide dielectric barrier for copper interconnect
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10.1116/1.2366541
/content/avs/journal/jvstb/24/6/10.1116/1.2366541
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366541

Figures

Image of FIG. 1.
FIG. 1.

Schematic drawings of the MIS structures used in this work. MIS-A: Al . MIS-B: Al .

Image of FIG. 2.
FIG. 2.

Relative dielectric constant and leakage current of SiCOF films as a function of flow rate.

Image of FIG. 3.
FIG. 3.

FTIR spectra of undoped SiCO and doped SiCOF12.

Image of FIG. 4.
FIG. 4.

Peak resolution of FTIR from wave numbers of (a) undoped SiCO and (b) doped SiCOF12.

Image of FIG. 5.
FIG. 5.

FTIR Peak ratio of , Si–H, and Si–F to Si–O bonds as a function of different flow rates.

Image of FIG. 6.
FIG. 6.

(a) Current density-electric field characteristic of MIS-A sample with different content films. (b) Pool-Frenkel model at room temperature.

Image of FIG. 7.
FIG. 7.

hysteresis effect at for MIS-A structure of doped SiCO and SiCOF12 sample; (a) sweep voltage of and (b) sweep voltage of .

Image of FIG. 8.
FIG. 8.

Dependence of the flatband voltage and on the different contents by sweep voltage of . The inset shows characteristics for the MIS-A structure.

Image of FIG. 9.
FIG. 9.

hysteresis effect at for MIS-B structure of doped SiCO and SiCOF12 sample; (a) of sweep voltage of and (b) sweep voltage of .

Tables

Generic image for table
TABLE I.

Comparison of the theoretical value of and experimental value of .

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/content/avs/journal/jvstb/24/6/10.1116/1.2366541
2006-11-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of fluorine-doped silicon-oxycarbide dielectric barrier for copper interconnect
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366541
10.1116/1.2366541
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