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Mobility study of a new naphthalenetetracarboxylic diimide derivative
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10.1116/1.2366611
/content/avs/journal/jvstb/24/6/10.1116/1.2366611
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366611

Figures

Image of FIG. 1.
FIG. 1.

Molecular structures of (a) NDA, where , called NDA-n1, and , called NDA-n2.

Image of FIG. 2.
FIG. 2.

(a) Cross section view of the bottom contact OTFT. (b) Cross section view of the top contact OTFT.

Image of FIG. 3.
FIG. 3.

Output characteristics for OTFTs based on (a) NDA-n2 and (b) NDA-n1 with gate dielectric. All measurements were carried out at ambient condition. The data shown are taken in ascending mode with an integration time of by averaging five points. The channel width and length for NDA-n2 OTFT are and , respectively, with a ratio of 67. For NDA-n1 OTFT, they are and with a ratio of 10.

Image of FIG. 4.
FIG. 4.

Thermal densification of the NDA-n1 film on substrate: (a) TGA thermograph, (b) film thickness from in situ SE, and (c) refractive index where the solid line is for the as-deposited film and the dashed line for annealing at .

Image of FIG. 5.
FIG. 5.

(a) Output characteristic and (b) transfer characteristic for NDA-n1 OTFT using polyethylene as the gate dielectric. (c) Output characteristic and (d) transfer characteristic for NDA-n1 OTFT using P(VDF-TrFE) as the gate dielectric. All measurements were carried out at ambient condition. The data shown are taken in ascending mode with an integration time of by averaging five points. The channel width and length are and , respectively, with a ratio of 67.

Image of FIG. 6.
FIG. 6.

Output characteristic for NDA-n1 based OTFT using polyethylene as the gate dielectric after annealing. All measurements were carried out at ambient condition. The data shown are taken in ascending mode with an integration time of by averaging five points. The channel width and length are and , respectively, with a ratio of 67.

Tables

Generic image for table
TABLE I.

Summary of the mobilities for OTFTs with NDA-n1 and NDA-n2 as organic semiconductors and as gate dielectric.

Generic image for table
TABLE II.

Summary of the mobilities of NDA-n1 OTFTs with bottom and top contacts with gate dielectric. The thickness of the NDA-n1 film is .

Generic image for table
TABLE III.

Summary of the mobilities of NDA-n1 OTFTs with different dielectrics.

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/content/avs/journal/jvstb/24/6/10.1116/1.2366611
2006-11-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility study of a new naphthalenetetracarboxylic diimide derivative
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366611
10.1116/1.2366611
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