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Efficient fabrication and characterization of cobalt nanoparticles embedded in metal∕oxide∕semiconductor structures for the application of nonvolatile memory
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10.1116/1.2366612
/content/avs/journal/jvstb/24/6/10.1116/1.2366612
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366612
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Process sequence of metal nanocrystal embedded MOS device.

Image of FIG. 2.
FIG. 2.

Typical surface images of Co NP measured by (a) SEM and (b) AFM.

Image of FIG. 3.
FIG. 3.

High resolution TEM images of MOS structure with Co NP. (a) Wide area and (b) enlarged cross-sectional TEM image when the sample consists of tunneling oxide NP ∕top gate oxide layers.

Image of FIG. 4.
FIG. 4.

Typical curves for samples A (with Co NP) and B (without Co NP). (a) The curve of sample B (circle) shows no hysteresis, while the curve of sample A (square) presents a hysteresis. Positive and negative stresses indicate the electron and hole chargings of Co NP, respectively. (b) Typical curve of sample A annealed by the thermal annealing process.

Image of FIG. 5.
FIG. 5.

Time dependence of capacitance shift at the zero gate voltage after electron (or hole) was stored in Co NP at room temperature. Inset image is an electron charge loss as a function of time for different tunneling oxide thicknesses (circle: and triangle: thickness).

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/content/avs/journal/jvstb/24/6/10.1116/1.2366612
2006-11-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficient fabrication and characterization of cobalt nanoparticles embedded in metal∕oxide∕semiconductor structures for the application of nonvolatile memory
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2366612
10.1116/1.2366612
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