Schematic representation of (a) the various constituents of ethyl-POSS copolymers and (b) polymethylsilsequioxane (PMSQ) and polydimethylsiloxane (PDMS)
Copolymer thickness evolution as measured by in situ ellipsometry during exposure to oxygen plasma under the following conditions: , , flow , and bias voltage of (a) and (b) .
Thickness loss for various copolymers at various plasma exposure times as a function of the inverse of the silicon mass percentage in the material. (a) bias, (b) zoom of (a), and (c) bias.
Initial etching rates of various copolymers as a function of for bias voltage of 0 and .
FTIR spectra for 100% ethyl-POSS material recorded after various exposure times.
Oxide thickness as estimated from XPS: (a) as a function of plasma exposure and in the absence of bias voltage, nonzero initial values results from POSS surface segregation phenomenon; (b) as a function of the silicon mass percentage in the copolymer. Notice the greater thickness at ; an evidence of ion-enhanced oxidation.
Total thickness loss as a function of the oxide thickness (a) Experimental data obtained at bias voltage and at 2, 10, 20, and etching times. The dashed lines are lines with a slope for the various copolymers. (b) Comparison between 0 and bias voltages after of etching.
Thickness variation of a 40% ethyl-POSS polymer for (a) and (b) biases, as measured by ellipsometry (marks), and fit results for the case of: (A) Watanabe and Onishi model (thin line), (B) a pure chemical oxidation model (Deal-Grove) (medium line), and (C) a pure ion-enhanced oxidation model (thick line), for (a) bias and (b) bias.
Parameter (corresponding to the ion projected range) and (corresponding to the initial oxidation rate) as a function of parameter (POSS content), for two bias voltages of 0 and .
Atomic percentages, oxide thickness, and atomic ratio in the oxidized layer, as measured by XPS after of etching in oxygen plasma with 0 and bias voltages. The corresponding thickness loss, measured by ellipsometry, is also indicated.
Copolymer mass percentage in silicon, parameter , and experimental ratio of the total thickness loss over the oxide thickness for of exposure to the oxygen plasma with bias.
Article metrics loading...
Full text loading...