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Plasma oxidation of polyhedral oligomeric silsesquioxane polymers
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Image of FIG. 1.
FIG. 1.

Schematic representation of (a) the various constituents of ethyl-POSS copolymers and (b) polymethylsilsequioxane (PMSQ) and polydimethylsiloxane (PDMS)

Image of FIG. 2.
FIG. 2.

Copolymer thickness evolution as measured by in situ ellipsometry during exposure to oxygen plasma under the following conditions: , , flow , and bias voltage of (a) and (b) .

Image of FIG. 3.
FIG. 3.

Thickness loss for various copolymers at various plasma exposure times as a function of the inverse of the silicon mass percentage in the material. (a) bias, (b) zoom of (a), and (c) bias.

Image of FIG. 4.
FIG. 4.

Initial etching rates of various copolymers as a function of for bias voltage of 0 and .

Image of FIG. 5.
FIG. 5.

FTIR spectra for 100% ethyl-POSS material recorded after various exposure times.

Image of FIG. 6.
FIG. 6.

Oxide thickness as estimated from XPS: (a) as a function of plasma exposure and in the absence of bias voltage, nonzero initial values results from POSS surface segregation phenomenon; (b) as a function of the silicon mass percentage in the copolymer. Notice the greater thickness at ; an evidence of ion-enhanced oxidation.

Image of FIG. 7.
FIG. 7.

Total thickness loss as a function of the oxide thickness (a) Experimental data obtained at bias voltage and at 2, 10, 20, and etching times. The dashed lines are lines with a slope for the various copolymers. (b) Comparison between 0 and bias voltages after of etching.

Image of FIG. 8.
FIG. 8.

Thickness variation of a 40% ethyl-POSS polymer for (a) and (b) biases, as measured by ellipsometry (marks), and fit results for the case of: (A) Watanabe and Onishi model (thin line), (B) a pure chemical oxidation model (Deal-Grove) (medium line), and (C) a pure ion-enhanced oxidation model (thick line), for (a) bias and (b) bias.

Image of FIG. 9.
FIG. 9.

Parameter (corresponding to the ion projected range) and (corresponding to the initial oxidation rate) as a function of parameter (POSS content), for two bias voltages of 0 and .


Generic image for table

Atomic percentages, oxide thickness, and atomic ratio in the oxidized layer, as measured by XPS after of etching in oxygen plasma with 0 and bias voltages. The corresponding thickness loss, measured by ellipsometry, is also indicated.

Generic image for table

Copolymer mass percentage in silicon, parameter , and experimental ratio of the total thickness loss over the oxide thickness for of exposure to the oxygen plasma with bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma oxidation of polyhedral oligomeric silsesquioxane polymers