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Effects of hard masks on etching properties of metal gates
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10.1116/1.2382950
/content/avs/journal/jvstb/24/6/10.1116/1.2382950
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2382950
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Figures

Image of FIG. 1.
FIG. 1.

Gate stacks of metal nitrides (TaN, HfN, and TiN) or poly- wafer with (a) , (b) , and (c) PR masks; thin layer is inserted between mask and TiN to enhance adhesion under the mask in (b).

Image of FIG. 2.
FIG. 2.

Etch rates of (a) TiN and (b) poly-Si as a function of etch time for different masks (, , and PR).

Image of FIG. 3.
FIG. 3.

Cross-sectional scanning electron microscopy images of the etched TiN gate stacks with the various masks of (a) , (b) , and (c) PR.

Image of FIG. 4.
FIG. 4.

XPS spectra of (a) Ti from TiN gate stacks and (b) Si from poly-Si gate stacks with various masks (solid data points represent before etching and open data points represent after etching for ). All samples were dipped into 1% diluted hydrofluoric acid for before etching to remove native-grown metal oxides. The Ti peak is composed of spin-orbit doublets, each separated by (Ref. 16). Only Ti is indicated in (a). All the XPS analyses were performed using a monochromatized source on a constant pass energy of .

Image of FIG. 5.
FIG. 5.

XPS spectra of O peak after etching for with various masks. shows a wide range of binding energy according to the ratio of to .

Image of FIG. 6.
FIG. 6.

Schematic illustration on the behavior of various by-products generated from the etching of TiN gate stacks for the various masks of (a) , (b) , and (c) PR. Oxygen generated from inside the chamber can be a source for the reaction because working pressure is and base pressure is in these experiments. There is a thin layer inserted between mask and TiN to enhance adhesion under mask.

Image of FIG. 7.
FIG. 7.

Concentration of elements detected by XPS from the etched TiN gate stacks as a function of etch time for the various masks of (a) , (b) , and (c) PR.

Image of FIG. 8.
FIG. 8.

Change of rms roughness of the etched TiN surface for various masks; negative and positive values in axis represent the decrease and increase of surface roughness after etching compared to before etching, respectively.

Image of FIG. 9.
FIG. 9.

AFM morphology of TiN surface as a function of etch time. The etching experiments are performed at a pressure of , a source power of , and a bias voltage of : (a) , (b) , (c) , and (d) ; /lateral unit, /vertical unit.

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/content/avs/journal/jvstb/24/6/10.1116/1.2382950
2006-11-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of SiO2∕Si3N4 hard masks on etching properties of metal gates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2382950
10.1116/1.2382950
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