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Orientation dependence of linewidth variation in sub- Gaussian e-beam lithography and its correction
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10.1116/1.2393292
/content/avs/journal/jvstb/24/6/10.1116/1.2393292
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2393292
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Primitive arrangements in the first quadrant of a zone plate pattern generated by custom software.

Image of FIG. 2.
FIG. 2.

(a) Square pattern of dose variation as viewed in a SEM micrograph of a zone plate exposure. (b) A high magnification SEM micrograph shows the square patterns are collective angular dose/linewidth variations. [(c) and (d)] Differential interference contrast (DIC) micrographs of the zone plates exposed with the patterns generated by (c) custom software and (d) JEOL software.

Image of FIG. 3.
FIG. 3.

(a) Trapezoid filling scheme of the JBX-9300FS. (b) Linewidth variation is due to the nonuniform filling near the primitive boundaries. (c) Correction of ODLWV effect by segmenting a parallelogram into three parts. The outer parts, whose widths are multiple of the shot pitch, are exposed at regular dose. The insert is exposed at a corrected dose which accounts for the missing spots. (d) Double-insert correction scheme, which is especially good for exposure of very thin lines. The dose for the two inserts (areas in boundaries BCFG with shadowed shots and IJKL with bold shots) is corrected by counting the excess shot spot area.

Image of FIG. 4.
FIG. 4.

Linewidth in nanometers of the underdosed part of the lines drawn at various angles. This figure shows the effect with shot pitch in a address grid.

Image of FIG. 5.
FIG. 5.

SEM micrograph of a zone plate pattern exposure and simulation of the same. The simulation is based on the data in Fig. 4.

Image of FIG. 6.
FIG. 6.

DIC micrographs of the test exposure. All the patterns are exposed with a shot pitch, except (d) and (h), whose shot pitch is . The arrows in (b) and (f) show the locations of the imperfect correction.

Image of FIG. 7.
FIG. 7.

Solution to increase the minimal dose of corrected pattern. (a) Original pattern. (b) Pattern corrected with single-insert scheme which cuts the minimal dose by half. (c) By broadening the insert by two shot pitches, the minimal dose is kept unchanged. (d) A modified double-insert scheme, which raises the minimal dose required by original double-insert scheme.

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/content/avs/journal/jvstb/24/6/10.1116/1.2393292
2006-11-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/6/10.1116/1.2393292
10.1116/1.2393292
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