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Characterization of hydrogen silsesquioxane as a inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of HSQ waveguide patterns exposed using e-beam doses of 100, 150, and and developed using three different developer concentrations of , , and . A well defined HSQ waveguide pattern was obtained using an e-beam dose of and developer concentration of . (e-beam dose and developer concentration are listed in parentheses.)

Image of FIG. 2.
FIG. 2.

Plot of linewidth vs exposure dose as a function of developer concentration.

Image of FIG. 3.
FIG. 3.

Plot of etch depth vs etching time as a function of dose for wide patterns in HSQ and UVN30.

Image of FIG. 4.
FIG. 4.

Layer structure of MQW for micromachining waveguide.

Image of FIG. 5.
FIG. 5.

SEM image of an air-clad multiple quantum well optical waveguide using HSQ as an etch mask.

Image of FIG. 6.
FIG. 6.

SEM image of the end facet of a released waveguide. Inset: Finite-element model of the fundamental optical mode within a released waveguide. The dimensions of the waveguide in the inset are chosen to match the dimension of the waveguide facet: high and wide. The lighter areas within the finite-element model indicate regions of high intensity for the optical mode.

Image of FIG. 7.
FIG. 7.

Normalized transmission spectrum from a long, wide waveguide. Inset: Fabry-Pérot interference fringes. TM: transverse magnetic polarization; TE: transverse electric polarization.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of hydrogen silsesquioxane as a Cl2∕BCl3 inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication