Characterization of hydrogen silsesquioxane as a inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication
SEM images of HSQ waveguide patterns exposed using e-beam doses of 100, 150, and and developed using three different developer concentrations of , , and . A well defined HSQ waveguide pattern was obtained using an e-beam dose of and developer concentration of . (e-beam dose and developer concentration are listed in parentheses.)
Plot of linewidth vs exposure dose as a function of developer concentration.
Plot of etch depth vs etching time as a function of dose for wide patterns in HSQ and UVN30.
Layer structure of MQW for micromachining waveguide.
SEM image of an air-clad multiple quantum well optical waveguide using HSQ as an etch mask.
SEM image of the end facet of a released waveguide. Inset: Finite-element model of the fundamental optical mode within a released waveguide. The dimensions of the waveguide in the inset are chosen to match the dimension of the waveguide facet: high and wide. The lighter areas within the finite-element model indicate regions of high intensity for the optical mode.
Normalized transmission spectrum from a long, wide waveguide. Inset: Fabry-Pérot interference fringes. TM: transverse magnetic polarization; TE: transverse electric polarization.
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