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Photon-beam lithography reaches half-pitch resolution
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10.1116/1.2401612
/content/avs/journal/jvstb/25/1/10.1116/1.2401612
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2401612

Figures

Image of FIG. 1.
FIG. 1.

Contrast curves for PMMA and calixarene resists.

Image of FIG. 2.
FIG. 2.

Top-down SEM micrographs of line/space patterns in calixarene with half-pitches of (a) , (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

Cross-section SEM images of calixarene patterns with half-pitches of (a) , (b) , and (c) .

Image of FIG. 4.
FIG. 4.

Top-down SEM micrographs of line/space patterns in PMMA with half-pitches of (a) , (b) , (c) , and (d) . The thickness of the PMMA film is .

Image of FIG. 5.
FIG. 5.

Top row: simulated intensity distribution for line/space patterns for exposure doses of 10, 100, and . Bottom row: Binary images obtained by applying a threshold to the intensity distributions shown above. The binary images serve as a simple approximation to developed images in a photoresist.

Tables

Generic image for table
TABLE I.

Processing parameters and measured sensitivity and contrast values for PMMA and calixarene resists exposed with EUV light. and stand for the doses at which the change in remaining resist thickness begins and ends. value for calixarene was determined as the dose at which 80% of the original thickness remained in the exposed area.

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/content/avs/journal/jvstb/25/1/10.1116/1.2401612
2007-01-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photon-beam lithography reaches 12.5nm half-pitch resolution
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2401612
10.1116/1.2401612
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