Contrast curves for PMMA and calixarene resists.
Top-down SEM micrographs of line/space patterns in calixarene with half-pitches of (a) , (b) , (c) , and (d) .
Cross-section SEM images of calixarene patterns with half-pitches of (a) , (b) , and (c) .
Top-down SEM micrographs of line/space patterns in PMMA with half-pitches of (a) , (b) , (c) , and (d) . The thickness of the PMMA film is .
Top row: simulated intensity distribution for line/space patterns for exposure doses of 10, 100, and . Bottom row: Binary images obtained by applying a threshold to the intensity distributions shown above. The binary images serve as a simple approximation to developed images in a photoresist.
Processing parameters and measured sensitivity and contrast values for PMMA and calixarene resists exposed with EUV light. and stand for the doses at which the change in remaining resist thickness begins and ends. value for calixarene was determined as the dose at which 80% of the original thickness remained in the exposed area.
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