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node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography
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10.1116/1.2429668
/content/avs/journal/jvstb/25/1/10.1116/1.2429668
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429668
/content/avs/journal/jvstb/25/1/10.1116/1.2429668
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/content/avs/journal/jvstb/25/1/10.1116/1.2429668
2007-01-09
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 45nm node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429668
10.1116/1.2429668
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