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node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography
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10.1116/1.2429668
/content/avs/journal/jvstb/25/1/10.1116/1.2429668
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429668
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top views of line∕space with the process of reference: (a) after ebeam lithography: sensitivity to shot butting, and (b) after hard mask etch: line cut defect, with corresponding electrical measurements (c).

Image of FIG. 2.
FIG. 2.

Description of different test structures used for evaluations: (a) Structure A or B into a real M1 environment with 40% of total writing area and (b) structure B exposed alone with an environment of total writing surface cloth to 0%.

Image of FIG. 3.
FIG. 3.

Description of test structures A (a) and B (b) with same CD∕pitch .

Image of FIG. 4.
FIG. 4.

Overall PW (a) and LER (b) evaluated on test structures A and B with different resist sensitivities.

Image of FIG. 5.
FIG. 5.

PW (a) and LER (b) of patterns A and B evaluated with resists CR01P (POR) and CR01P-Tr1.

Image of FIG. 6.
FIG. 6.

Comparison on structure B of PW (b) and of LER (b) values with 40% or 0% of writing area using different tested resists.

Image of FIG. 7.
FIG. 7.

PW (a) and LER (b) vs the number of electrons per shot, evaluated for all resists on structures A and B with 40% and 0% of writing area.

Image of FIG. 8.
FIG. 8.

Top view of serpentine-comb structure (CD ∕pitch ) after etch (a) and cumulative distribution of the measurements of resistance (b) and leakage current (c) on the wafer.

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/content/avs/journal/jvstb/25/1/10.1116/1.2429668
2007-01-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 45nm node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429668
10.1116/1.2429668
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