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Simple model for dielectrophoretic alignment of gallium nitride nanowires
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10.1116/1.2429673
/content/avs/journal/jvstb/25/1/10.1116/1.2429673
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429673

Figures

Image of FIG. 1.
FIG. 1.

Calculated DEP force experienced by a nanowire ( diameter and in length) in different dispersing media as a function of the alignment voltage. The drop in the DEP force for different solvents starts around .

Image of FIG. 2.
FIG. 2.

(a) Calculated DEP force experienced by a nanowire ( diameter and in length) and a spherical fragment ( diameter) in IPA with alignment frequency at . (b) Variations of the DEP force experienced by spherical GaN microfragments in IPA as a function of their diameters, with alignment frequency set to .

Image of FIG. 3.
FIG. 3.

Calculated DEP force variation as a function of nanowire diameter and length. The alignment frequency is set to and the dispersing medium is IPA.

Tables

Generic image for table
TABLE I.

Physical parameters used for the calculations of DEP forces for a nanowire in different solvents. ( denotes the dielectric permittivity of .)

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/content/avs/journal/jvstb/25/1/10.1116/1.2429673
2007-01-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simple model for dielectrophoretic alignment of gallium nitride nanowires
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/1/10.1116/1.2429673
10.1116/1.2429673
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