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Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in
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10.1116/1.2712198
/content/avs/journal/jvstb/25/2/10.1116/1.2712198
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/2/10.1116/1.2712198
/content/avs/journal/jvstb/25/2/10.1116/1.2712198
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/content/avs/journal/jvstb/25/2/10.1116/1.2712198
2007-03-06
2015-05-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP∕InGaAsP
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/2/10.1116/1.2712198
10.1116/1.2712198
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