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Anisotropic fluorocarbon plasma etching of heterostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM image of a heterostructure etched in a RIE plasma shows the SiGe undercut beneath Si, after Ref. 5.

Image of FIG. 2.
FIG. 2.

Schematic diagram of helicon plasma tool. The diode laser shown was used to form a thin film interferometer on the substrate surface for in situ etch rate measurements.

Image of FIG. 3.
FIG. 3.

Heterostructures with a spacer layer and a dopant layer were used for patterned etching to define quantum dots, and a spacer layer and a dopant layer were used for in situ etch rate measurements. Undesired undercutting due to enhanced etching of SiGe compared to Si is depicted, as observed in -based RIE etching, and shown in Fig. 1.

Image of FIG. 4.
FIG. 4.

Etch rate (a) and selectivity (b) as a function of average bias voltage when using sinusoidal and tailored bias voltage wave forms. Plasma etch conditions: , Ar, and ; helicon power; gas pressure. Based on the etch selectivity of over PMMA, tailored bias voltage wave form was chosen to etch patterned quantum dot samples subsequently.

Image of FIG. 5.
FIG. 5.

SEM image of structure etched in a helicon plasma shows a straight sidewall etch profile. The plasma conditions: , Ar, and ; helicon power; and gas pressure; tailored bias voltage.

Image of FIG. 6.
FIG. 6.

AFM images of quantum dot pattern: (a) after etching and PMMA removal with acetone; (b) after etching, PMMA removal in acetone and plasma cleaning. The plasma conditions: , helicon power, and gas pressure.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic fluorocarbon plasma etching of Si∕SiGe heterostructures