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Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation
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10.1116/1.2715971
/content/avs/journal/jvstb/25/2/10.1116/1.2715971
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/2/10.1116/1.2715971
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM photograph of Nb stripes measured in a four-probe configuration. 1: long and wide, 2: long and wide, 3: long and wide, and 4: long and wide. (b) Width dependence of for Nb stripes fabricated using different undercut resists and etching methods. The inset represents resistance vs temperature curves for wide Nb stripes.

Image of FIG. 2.
FIG. 2.

ECR etching angle dependence of for Nb stripes fabricated using a copolymer undercut resist. The top inset shows schematically the etching angle during the ECR etching process. The bottom inset represents resistance vs temperature curves for wide Nb stripes.

Image of FIG. 3.
FIG. 3.

Measured vs room-temperature resistivity for Nb stripes fabricated using different undercut resists and etching methods.

Image of FIG. 4.
FIG. 4.

(a) SEM photograph of an all-Nb single tunnel junction. (b) Temperature dependence of current-voltage characteristics of the single junction with a barrier oxidized for .

Image of FIG. 5.
FIG. 5.

SEM photograph of an all-Nb single-electron transistor.

Image of FIG. 6.
FIG. 6.

Comparison of normal-state junction resistances for all-Nb SETs at 300 and . Note the different scale in the and axes. The inset represents resistance at 300 and vs oxidation time for SETs consisting of junctions with an area of .

Image of FIG. 7.
FIG. 7.

(a) characteristics for an all-Nb SET at in the superconducting state. Clear gate-voltage modulated features, including supercurrent, are observed. The modulation period corresponds to . (b) Normal-state characteristics of the same sample at . Clear Coulomb diamond structures are observed near the origin.

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/content/avs/journal/jvstb/25/2/10.1116/1.2715971
2007-03-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/2/10.1116/1.2715971
10.1116/1.2715971
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