Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation
(a) SEM photograph of Nb stripes measured in a four-probe configuration. 1: long and wide, 2: long and wide, 3: long and wide, and 4: long and wide. (b) Width dependence of for Nb stripes fabricated using different undercut resists and etching methods. The inset represents resistance vs temperature curves for wide Nb stripes.
ECR etching angle dependence of for Nb stripes fabricated using a copolymer undercut resist. The top inset shows schematically the etching angle during the ECR etching process. The bottom inset represents resistance vs temperature curves for wide Nb stripes.
Measured vs room-temperature resistivity for Nb stripes fabricated using different undercut resists and etching methods.
(a) SEM photograph of an all-Nb single tunnel junction. (b) Temperature dependence of current-voltage characteristics of the single junction with a barrier oxidized for .
SEM photograph of an all-Nb single-electron transistor.
Comparison of normal-state junction resistances for all-Nb SETs at 300 and . Note the different scale in the and axes. The inset represents resistance at 300 and vs oxidation time for SETs consisting of junctions with an area of .
(a) characteristics for an all-Nb SET at in the superconducting state. Clear gate-voltage modulated features, including supercurrent, are observed. The modulation period corresponds to . (b) Normal-state characteristics of the same sample at . Clear Coulomb diamond structures are observed near the origin.
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