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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin step-graded buffer layers for high- III-V metal-oxide-semiconductor field effect transistor applications
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10.1116/1.2713119
/content/avs/journal/jvstb/25/3/10.1116/1.2713119
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2713119
/content/avs/journal/jvstb/25/3/10.1116/1.2713119
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/content/avs/journal/jvstb/25/3/10.1116/1.2713119
2007-05-31
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm)Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2713119
10.1116/1.2713119
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