Growth structures for (a) structure with single “test” layer, and (b) sample D and sample E .
SIMS data for (a) sample A showing Ca concentrations at the substrate/epilayer interface and at the beginning of the LT-GaAs layer. The SIMS data for (b) sample B are also shown where Ca is only observed at the substrate/epilayer interface.
SIMS data for sample C showing Ca (left axis) and Al (right axis) concentrations indicating Ca incorporation at each interface.
SIMS data for Ca (left axis) and Al (right axis) in (a) sample D ( SL) and (b) sample E ( SL) with each SL followed by LT-GaAs. Ca incorporation is observed in Al(Ga)As SL’s and the LT-GaAs layer.
Growth structures for the SIMS data discussed in this work. (Sample grown at UT)
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