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Unintentional calcium incorporation in Ga(Al, In, N)As
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10.1116/1.2717196
/content/avs/journal/jvstb/25/3/10.1116/1.2717196
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2717196

Figures

Image of FIG. 1.
FIG. 1.

Growth structures for (a) structure with single “test” layer, and (b) sample D and sample E .

Image of FIG. 2.
FIG. 2.

SIMS data for (a) sample A showing Ca concentrations at the substrate/epilayer interface and at the beginning of the LT-GaAs layer. The SIMS data for (b) sample B are also shown where Ca is only observed at the substrate/epilayer interface.

Image of FIG. 3.
FIG. 3.

SIMS data for sample C showing Ca (left axis) and Al (right axis) concentrations indicating Ca incorporation at each interface.

Image of FIG. 4.
FIG. 4.

SIMS data for Ca (left axis) and Al (right axis) in (a) sample D ( SL) and (b) sample E ( SL) with each SL followed by LT-GaAs. Ca incorporation is observed in Al(Ga)As SL’s and the LT-GaAs layer.

Tables

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TABLE I.

Growth structures for the SIMS data discussed in this work. (Sample grown at UT)

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/content/avs/journal/jvstb/25/3/10.1116/1.2717196
2007-05-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unintentional calcium incorporation in Ga(Al, In, N)As
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2717196
10.1116/1.2717196
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