Comprehensive investigation on emitter ledge length of heterojunction bipolar transistors
Schematic cross section of the simulated device structure.
The energy band diagrams (a) along the cut lines and of the studied device (without any ledge passivation) and (b) along the cut lines , , and of the studied devices (with emitter ledge length of ).
The distributions of recombination rate of the studied devices (a) (without any ledge passivation) and (b) (with emitter ledge length of ).
Recombination rates along the cut line of the studied devices.
Electron densities along the cut line of the studied devices.
Comparison of experimental and simulated Gummel plots at . The symbols denote corresponding characteristics of the experimental devices. The related simulation results are shown with lines.
The relationships between the dc current gain and emitter ledge length under different collector current densities.
Extrinsic base surface recombination current density and base current ideality factor as a function of the base-emitter bias.
The dependencies of maximum oscillation frequency and unity current gain cutoff frequency on the emitter ledge length .
Used InGaP emitter ledge length for the simulated device structures
Material parameters used in theoretical simulation.
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