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Comprehensive investigation on emitter ledge length of heterojunction bipolar transistors
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10.1116/1.2723746
/content/avs/journal/jvstb/25/3/10.1116/1.2723746
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2723746
/content/avs/journal/jvstb/25/3/10.1116/1.2723746
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/content/avs/journal/jvstb/25/3/10.1116/1.2723746
2007-04-12
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2723746
10.1116/1.2723746
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