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Comprehensive investigation on emitter ledge length of heterojunction bipolar transistors
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10.1116/1.2723746
/content/avs/journal/jvstb/25/3/10.1116/1.2723746
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2723746

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the simulated device structure.

Image of FIG. 2.
FIG. 2.

The energy band diagrams (a) along the cut lines and of the studied device (without any ledge passivation) and (b) along the cut lines , , and of the studied devices (with emitter ledge length of ).

Image of FIG. 3.
FIG. 3.

The distributions of recombination rate of the studied devices (a) (without any ledge passivation) and (b) (with emitter ledge length of ).

Image of FIG. 4.
FIG. 4.

Recombination rates along the cut line of the studied devices.

Image of FIG. 5.
FIG. 5.

Electron densities along the cut line of the studied devices.

Image of FIG. 6.
FIG. 6.

Comparison of experimental and simulated Gummel plots at . The symbols denote corresponding characteristics of the experimental devices. The related simulation results are shown with lines.

Image of FIG. 7.
FIG. 7.

The relationships between the dc current gain and emitter ledge length under different collector current densities.

Image of FIG. 8.
FIG. 8.

Extrinsic base surface recombination current density and base current ideality factor as a function of the base-emitter bias.

Image of FIG. 9.
FIG. 9.

The dependencies of maximum oscillation frequency and unity current gain cutoff frequency on the emitter ledge length .

Tables

Generic image for table
TABLE I.

Used InGaP emitter ledge length for the simulated device structures

Generic image for table
TABLE II.

Material parameters used in theoretical simulation.

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/content/avs/journal/jvstb/25/3/10.1116/1.2723746
2007-04-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2723746
10.1116/1.2723746
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