TiN etch rate in HBr and plasmas as a function of (a) bias power and (b) the ratio ( bias power).
Chemical composition of the TiN surface before etching, after an Ar breakthrough and exposure to HBr plasmas under different bias power conditions. Plasma operating conditions are HBr , source power: , and pressure: .
Chemical composition of the TiN surface before etching, after an Ar breakthrough and exposure to plasmas under different bias power conditions. Plasma operating conditions are , source power: , and pressure: .
AFM pictures of the TiN surface after etching in (a) HBr and (b) plasma chemistries. In both cases plasma operating conditions are gas flow rate, pressure, rf bias power, rf power, and exposure time. The value indicated on the scale located on the right side of the images show the difference between the highest and lowest point measured by the tip.
Evolution of the TiN surface roughness (rms) as a function of bias power in HBr and plasmas using the following plasma conditions:gas flow of , source power of , and pressure of .
SEM picture of poly- stack after TiN etching in .
SEM pictures of a poly- metal gate. (a) The TiN layer is etched in pure plasma and (b) in pure HBr plasma.
(a) Polysilicon etch profile obtained after etching a polysilicon layer on . (b) Polysilicon etch profile after etching a polysilicon layer on TiN.
Poly-Si etch profiles in (a) dense and (b) isolated lines after ME, SL, and OE on the TiN surface.
Poly- etch profiles in (a) isolated line (TEM picture) and (b) dense lines (SEM picture) after the TiN BT and etching step (starting from the profile of Fig. 9 ).
XPS analysis of the silicon gate sidewalls after (a) silicon etching and (b) silicon and TiN etching processes. The numbers indicate the percentage of atomic element detected on the feature sidewalls and the rectangles are sized proportionally.
Poly- etch profiles in (a) isolated line (TEM picture) and (b) dense lines (SEM picture) with the poly-Si layer and TiN layer etched in a single step process.
AFM images of the surface after TiN etching in plasmas using different bias power conditions: (a) 15, (b) 50, and (c) . The same scale has been used for the two-dimensional AFM images, the darkest picture corresponding to the less rough surfaces.
High resolution TEM image of the foot of the poly- metal. The interfacial layer is thinner below the gate than in areas exposed to the plasma.
Plasma operating conditions used in the different steps involved in the gate stack process etched layer by layer. Gas flow rates are in SCCM, “EP” is for end point detection.
Plasma operating conditions of the poly- gate stack etch process with the poly-Si layer and TiN layer etched in a single step process. “EP” is for end point detection.
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