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Study of photoresist etching and roughness formation in electron-beam generated plasmas
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10.1116/1.2732741
/content/avs/journal/jvstb/25/3/10.1116/1.2732741
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2732741
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Chemical Structures of 193 and photoresist polymers.

Image of FIG. 2.
FIG. 2.

Schematic diagram of LAPPS etching chamber.

Image of FIG. 3.
FIG. 3.

Etch rate and rms roughness values of PRs as a function of rf induced dc self-bias in Ar and 5% electron-beam generated plasmas. Initial photoresist rms roughness values are shown by dotted lines.

Image of FIG. 4.
FIG. 4.

rms roughness per nanometer PR etched vs bias voltage. The samples were run at standard conditions discussed in text.

Image of FIG. 5.
FIG. 5.

Etch rates and rms roughness of PRs at various percentages of in plasma gas mixture. A bias was used.

Image of FIG. 6.
FIG. 6.

Etch depth per pulse and rms roughness of PRs at varying times for in 5% plasmas. Experiments were performed at otherwise standard conditions with a bias.

Image of FIG. 7.
FIG. 7.

AFM images of FC films deposited on photoresist before and after Ar etching with a bias. (a) Thin and (b) thick FC layers.

Image of FIG. 8.
FIG. 8.

(a) PR rms roughness and PR etch depth of FC layer∕PR stack in an Ar plasma as a function of the FC film thickness for thick FC films. (b) Same data for PR. The FC film was deposited in a pure plasma and the etching experiments were done in a pure Ar plasma and substrate bias.

Image of FIG. 9.
FIG. 9.

(a) PR rms roughness and PR etch depth of FC layer∕PR stack in an Ar plasma as a function of the FC film thickness for thin FC films. (b) Same data for PR. The FC film was deposited in a 10% in Ar plasma and the etching experiments were done in a pure Ar plasma and substrate bias.

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/content/avs/journal/jvstb/25/3/10.1116/1.2732741
2007-04-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of photoresist etching and roughness formation in electron-beam generated plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/3/10.1116/1.2732741
10.1116/1.2732741
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