(a) Cross-sectional TEM image of sputter-deposited double heteroepitaxial structure on a Si (100) substrate. Inset shows the corresponding electron diffraction pattern of . (b) Cross-sectional TEM image of a single crystalline Si layer deposited by AP-CVD system at on the sputter-deposited double heteroepitaxial structure. Inset shows a TEM image of an agglomerated particle at a higher magnification. (c) Higher resolution TEM image of an interface between an agglomerated particle and a Si layer and the corresponding electron diffraction pattern of an agglomerated particle.
SEM images of the structure after thickening the upper Si layer in Fig. 1(a) by LP-CVD at (a) and (b) . The inset right above of each image shows the XRD spectrum of each sample. XRD spectra from 20° to 60° were obtained with Cu x-ray operated at and and the ones from 68.5° to 70° were obtained with Cu x-ray operated at and .
(a) TEM image of a SiNC shown in Fig. 2(b). The apex (I) and the body (II) of the SiNC were analyzed. EDX spectra and electron diffraction patterns taken from (b) the apex (I) and (c) the body (II) of the SiNC.
SEM images of Si (100) structures annealed in atmosphere at different temperatures. The scale bar applies for all images.
Schematic images of formation mechanism of SiNCs. (a) The agglomeration step of double heteroepitaxial structure, (b) the growth process of SiNCs catalyzed by particles of various sizes, and (c) the competitive growth of SiNCs between a small catalyst particle and a big catalyst particle.
Plan-view SEM images and number density of SiNCs deposited after annealing at on (a) , (b) , (c) , and (d) after annealing at on , and (e) after annealing at on . The scale bar applies for all images.
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