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Direct-write trilayer technology for superconductor-insulator-normal metal tunnel junction fabrication
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10.1116/1.2743655
/content/avs/journal/jvstb/25/4/10.1116/1.2743655
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2743655
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison between the two versions of the fabrication procedure: Technology 1 (column to the left); Technology 2 (column to the right).

Image of FIG. 2.
FIG. 2.

AFM images of the tunnel junctions manufactured in Technology 1.

Image of FIG. 3.
FIG. 3.

Optical image of four tunnel junctions fabricated in Technology 2.

Image of FIG. 4.
FIG. 4.

curves and at , Technology 1. Dynamic resistance around zero voltage is inserted in the middle; arrow to the right.

Image of FIG. 5.
FIG. 5.

curves and at , Technology 2.

Image of FIG. 6.
FIG. 6.

Voltage vs temperature dependence of a single tunnel junction. The chosen biasing current corresponds to maximum .

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/content/avs/journal/jvstb/25/4/10.1116/1.2743655
2007-06-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct-write trilayer technology for Al–Al2O3–Cu superconductor-insulator-normal metal tunnel junction fabrication
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2743655
10.1116/1.2743655
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