Functionalization and characterization of InAs and InP surfaces with hemin
Hemin and benzoic acid functionalized to III-V surface.
XPS data with deconvoluted Gaussian-Lorentzian component fits of (a) InAs and InP samples in the C region. Before and after functionalization with hemin and benzoic acid for the InAs sample in the (b) As region, (c) N region, and (d) Fe region.
XPS data with error function fits before and after functionalization with hemin and benzoic acid for the InAs and InP samples in the valence band region.
AFM images of InAs functionalized with 1 and hemin solutions with a hemin:benzoic acid (BA) ratio of 1:10. The root mean square roughness values are also shown.
Imaginary part of the pseudodielectric function of the InP and InAs surfaces dipped in the hemin (H) solution and in the hemin:benzoic solution. For comparison, the spectra of the degreased substrates (black line) are also shown. Black crosses are for hemin and dipping time; black dots are for H and dipping time; gray lines refer to hemin solution; and gray crosses are for H and dipping time.
Imaginary part of the pseudodielectric function of the InAs surfaces dipped in the benzoic acid solution for , , and . For comparison, the spectrum of the degreased substrate is also shown.
Data of functionalization hemin overlayer thickness and coverage for InP and InAs as derived from SE data.
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