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Conducting properties of suspended carbon nanotubes grown by thermal chemical vapor deposition
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Image of FIG. 1.
FIG. 1.

The schematic plots of the fabrication process of carbon nanotube devices. (a) Deposition of silicon oxide as the insulating layer. (b) Deposition of the barrier layer (TiN), the catalyst (Ni), and the electrode metal (Ti). (c) Lithographic steps to open the gap between metal islands. (d) Thermal CVD growth of carbon nanotubes.

Image of FIG. 2.
FIG. 2.

TEM images of (a) middle and (b) tip sections of a carbon nanotube.

Image of FIG. 3.
FIG. 3.

FESEM images of device M2 chosen from process run R2. There is only one bridging nanotube connecting the metal islands. The bridging nanotube is also shown in the inset.

Image of FIG. 4.
FIG. 4.

FESEM images of device SM5 chosen from process run R5. There are only two bridging nanotubes. The two bridging nanotubes are labeled by (a) and (b), and are shown in the insets.

Image of FIG. 5.
FIG. 5.

Raman spectra of the five process runs, R1, R2, R3, R4, and R5. The ratio is around .

Image of FIG. 6.
FIG. 6.

Transfer characteristics of metallic devices M2 and M1, and mixed device SM5. The inset is the illustrative plot of mixed device SM5, which has one -CNT and one -CNT as the bridging nanotubes.

Image of FIG. 7.
FIG. 7.

Transfer characteristics of purely semiconductive devices S5 and S3 are plotted. The insets show the device structures.

Image of FIG. 8.
FIG. 8.

Schematic plot of (a) the purely semiconductive device and (b) its band diagram.


Generic image for table

Process conditions with yields of sparse suspended nanotube devices are given in this table. The process conditions are labeled by R1, R2, R3, R4, and R5.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conducting properties of suspended carbon nanotubes grown by thermal chemical vapor deposition