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Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth
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10.1116/1.2749529
/content/avs/journal/jvstb/25/4/10.1116/1.2749529
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2749529
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Boron SIMS profiles obtained from the implanted sample after LTSPEG and post-LTSPEG annealing at 650, 750, and , respectively.

Image of FIG. 2.
FIG. 2.

Boron SIMS profiles obtained from the samples with and without MeV implantation. (a) After LTSPEG at , (b) after post-LTSPEG annealing at , and (c) after post-LTSPEG annealing at .

Image of FIG. 3.
FIG. 3.

Comparisons of sheet resistance of samples after post-LTSPEG annealing, with and without MeV implantation.

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/content/avs/journal/jvstb/25/4/10.1116/1.2749529
2007-07-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2749529
10.1116/1.2749529
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