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Hydrogen sensing characteristics and mechanism of Schottky diodes subjected to oxygen gettering
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10.1116/1.2750343
/content/avs/journal/jvstb/25/4/10.1116/1.2750343
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2750343
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Structure of the diode and (b) the surface control process for oxygen gettering.

Image of FIG. 2.
FIG. 2.

Effect of the surface control process on characteristics of the diode.

Image of FIG. 3.
FIG. 3.

Hydrogen-induced changes of characteristics of the diode (a) in vacuum and (b) in air.

Image of FIG. 4.
FIG. 4.

Measured transient wave forms of current in the form of vs plot: (a) turn-on transients in vacuum, (b) turn-off transient in vacuum, and (c) on and off transients in air.

Image of FIG. 5.
FIG. 5.

Measured characteristics of the diode (a) in vacuum and (b) in air.

Image of FIG. 6.
FIG. 6.

(a) Capacitance transients and (b) current transients measured on the same diode in air.

Image of FIG. 7.
FIG. 7.

Comparison of transient wave forms between theory and experiment for the diode placed in air: (a) exponential fitting and (b) fitting to numerical solutions of Eq. (10).

Image of FIG. 8.
FIG. 8.

(a) Experimental data and theoretical curve for the steady-state current plotted vs square root of hydrogen pressure for a diode place in air, and (b) experimental data and theoretical curve for initial rise-up constant for the same diode.

Image of FIG. 9.
FIG. 9.

(a) Values of SBH changes obtained by current measurements and capacitance measurements, and (b) schematic illustration of the thin surface barrier (TSB) model.

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/content/avs/journal/jvstb/25/4/10.1116/1.2750343
2007-07-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen sensing characteristics and mechanism of Pd∕AlGaN∕GaN Schottky diodes subjected to oxygen gettering
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2750343
10.1116/1.2750343
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