Hydrogen sensing characteristics and mechanism of Schottky diodes subjected to oxygen gettering
(a) Structure of the diode and (b) the surface control process for oxygen gettering.
Effect of the surface control process on characteristics of the diode.
Hydrogen-induced changes of characteristics of the diode (a) in vacuum and (b) in air.
Measured transient wave forms of current in the form of vs plot: (a) turn-on transients in vacuum, (b) turn-off transient in vacuum, and (c) on and off transients in air.
Measured characteristics of the diode (a) in vacuum and (b) in air.
(a) Capacitance transients and (b) current transients measured on the same diode in air.
Comparison of transient wave forms between theory and experiment for the diode placed in air: (a) exponential fitting and (b) fitting to numerical solutions of Eq. (10).
(a) Experimental data and theoretical curve for the steady-state current plotted vs square root of hydrogen pressure for a diode place in air, and (b) experimental data and theoretical curve for initial rise-up constant for the same diode.
(a) Values of SBH changes obtained by current measurements and capacitance measurements, and (b) schematic illustration of the thin surface barrier (TSB) model.
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