Process flow for CNT growth with a resist-assisted patterning process.
Optical image of resist-coated Ni catalyst on a silicon substrate after (a) and (b) forming.
SEM image of (a) CNT emitter arrays and (b) magnified image of the emitters. The island diameter and pitch is 3 and , respectively.
TEM image of CNTs grown with the RAP process.
Ni contents at the device-fabrication site as a function of forming temperature.
Raman spectra after forming at (a) and (b) .
TEM images of the substrate (a) before and (b) after forming.
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