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Growth of carbon nanotubes with resist-assisted patterning process
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10.1116/1.2752513
/content/avs/journal/jvstb/25/4/10.1116/1.2752513
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2752513
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Process flow for CNT growth with a resist-assisted patterning process.

Image of FIG. 2.
FIG. 2.

Optical image of resist-coated Ni catalyst on a silicon substrate after (a) and (b) forming.

Image of FIG. 3.
FIG. 3.

SEM image of (a) CNT emitter arrays and (b) magnified image of the emitters. The island diameter and pitch is 3 and , respectively.

Image of FIG. 4.
FIG. 4.

TEM image of CNTs grown with the RAP process.

Image of FIG. 5.
FIG. 5.

Ni contents at the device-fabrication site as a function of forming temperature.

Image of FIG. 6.
FIG. 6.

Raman spectra after forming at (a) and (b) .

Image of FIG. 7.
FIG. 7.

TEM images of the substrate (a) before and (b) after forming.

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/content/avs/journal/jvstb/25/4/10.1116/1.2752513
2007-07-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of carbon nanotubes with resist-assisted patterning process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2752513
10.1116/1.2752513
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