1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
compressive-strain multiple quantum well with -type modulation-doped GaInP intermediate-barrier laser diodes
Rent:
Rent this article for
USD
10.1116/1.2757183
/content/avs/journal/jvstb/25/4/10.1116/1.2757183
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2757183

Figures

Image of FIG. 1.
FIG. 1.

LD device structure and schematic conduction-band diagram of the compressive-strain multiple quantum well with -type modulation-doped GaInP intermediate barrier.

Image of FIG. 2.
FIG. 2.

(a) Threshold current density at as a function of inverse cavity length for the compressive-strain multiple quantum well with different modulation-doping concentrations in the modulation-doped GaInP intermediate-barrier broad-area LDs. (b) The light output power as a function of injection current for the various doping concentrations in the modulation-doped GaInP intermediate barrier.

Image of FIG. 3.
FIG. 3.

Inverse differential quantum efficiency vs cavity length for the LDs with different doping concentrations in the modulation-doped GaInP intermediate barrier.

Image of FIG. 4.
FIG. 4.

Internal quantum efficiency and internal optical loss as a function of different doping concentrations in the modulation-doped GaInP intermediate barrier.

Image of FIG. 5.
FIG. 5.

Calculated threshold gain as a function of the cavity length under various doping concentrations in the modulation-doped GaInP intermediate barrier.

Image of FIG. 6.
FIG. 6.

(a) Room-temperature cw light output power as a function of injected current for ridge-stripe and cavity-length as-cleaved LDs with different doping concentrations in the modulation-doped GaInP intermediate barrier. (b) The dependence of the threshold current and slope efficiency on room temperature in various doping concentrations.

Image of FIG. 7.
FIG. 7.

(a) Temperature dependence of light output power vs cw forward-current characteristic for the ridge-stripe LDs with the modulation-doped GaInP intermediate barrier doped to . (b) The dependence of the threshold current and slope efficiency on operation temperature between 20 and .

Image of FIG. 8.
FIG. 8.

Dependence of lasing spectra at on the heat-sink temperature of the LDs with doping∕undoping in GaInP intermediate barrier.

Tables

Generic image for table
TABLE I.

Further details of the film growth.

Generic image for table
TABLE II.

Summary of infinite threshold current density, internal quantum efficiency, internal optical loss, and electroluminescence for various doping concentrations in the doped barriers.

Loading

Article metrics loading...

/content/avs/journal/jvstb/25/4/10.1116/1.2757183
2007-07-27
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.3μmGa0.11In0.89As0.24P0.76∕Ga0.27In0.73As0.67P0.33 compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/4/10.1116/1.2757183
10.1116/1.2757183
SEARCH_EXPAND_ITEM