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Creation of sub- contact using diblock copolymer on a wafer for complementary metal oxide semiconductor applications
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10.1116/1.2787732
/content/avs/journal/jvstb/25/6/10.1116/1.2787732
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2787732
/content/avs/journal/jvstb/25/6/10.1116/1.2787732
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/content/avs/journal/jvstb/25/6/10.1116/1.2787732
2007-12-06
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Creation of sub-20-nm contact using diblock copolymer on a 300mm wafer for complementary metal oxide semiconductor applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2787732
10.1116/1.2787732
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