Creation of sub- contact using diblock copolymer on a wafer for complementary metal oxide semiconductor applications
Process scheme of self-aligned PS--PMMA diblock copolymer. (a) Dual hard mask depositions . (b) hard mask open. (c) Annealing. (d) Pattern transfer into SiN hard mask with diblock copolymer. Black represents PMMA and light gray represents PS.
(a) Placer design for forming single cylindrical contact. The small square is the placer mask and the circle represents the etched shape. (b) SEM image. PMMA appears as dark regions and PS appears as brighter regions.
Top-down SEM image of a uniform cylindrical block copolymer on large area.
(a) Schematic layout of the placer on the metal line. (b) SEM top-down image of the single contact on the trench.
Contact formation with excessive trench widths.
Cross-section SEM image of a two stage etch process.
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