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Creation of sub- contact using diblock copolymer on a wafer for complementary metal oxide semiconductor applications
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View: Figures


Image of FIG. 1.
FIG. 1.

Process scheme of self-aligned PS--PMMA diblock copolymer. (a) Dual hard mask depositions . (b) hard mask open. (c) Annealing. (d) Pattern transfer into SiN hard mask with diblock copolymer. Black represents PMMA and light gray represents PS.

Image of FIG. 2.
FIG. 2.

(a) Placer design for forming single cylindrical contact. The small square is the placer mask and the circle represents the etched shape. (b) SEM image. PMMA appears as dark regions and PS appears as brighter regions.

Image of FIG. 3.
FIG. 3.

Top-down SEM image of a uniform cylindrical block copolymer on large area.

Image of FIG. 4.
FIG. 4.

(a) Schematic layout of the placer on the metal line. (b) SEM top-down image of the single contact on the trench.

Image of FIG. 5.
FIG. 5.

Contact formation with excessive trench widths.

Image of FIG. 6.
FIG. 6.

Cross-section SEM image of a two stage etch process.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Creation of sub-20-nm contact using diblock copolymer on a 300mm wafer for complementary metal oxide semiconductor applications