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Are extreme ultraviolet resists ready for the node?
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Image of FIG. 1.
FIG. 1.

At LBNL resolution of , 1:1 was achieved using three different approaches. In (A) the KrF polymer contains a blend of high and low activation energy components, the sample shown in (B) uses a high activation energy ArF polymer, while (C) uses a low activation energy KrF approach. By using a less aggressive sensitivity requirement combined with a short acid diffusion length polymeric resist , a 1:1 resolution shown in (D) and (E) was achieved. (F) Using interference lithography at PSI, resolution of dense features was demonstrated.

Image of FIG. 2.
FIG. 2.

Top-down images of (a) dense lines and (b) dense lines (resist B) at the best focus and with different doses.

Image of FIG. 3.
FIG. 3.

Bossung plots of the dense lines at different PEB temperatures (top) and process window plots (bottom) of the dense lines at different PEB temperatures indicate improvement with lower PEB temperatures.

Image of FIG. 4.
FIG. 4.

Spatial frequency analysis of the LER obtained with different PEB temperatures.

Image of FIG. 5.
FIG. 5.

Through dose performance for semi-isolated contacts is shown above. Doses start at and continue through . Imaging quality is good, but sensitivity needs to be improved to meet EUV requirements.


Generic image for table

Total outgassing molecules (species in between 35 and ) of several typical samples. The recommended specification from SEMATECH with this method is .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Are extreme ultraviolet resists ready for the 32nm node?