Classification of EUVL-related publications.
Cross-sectional view of the ETS tool, its major components, and the EUV beam path.
ETS 28° arc illuminator (left) and mask coverage of the full-field in step-and-scan mode (the full field is extendable to in the scanned dimension).
Comparison of Xe and Sn EUV emission spectra from discharge-produced plasma generated under identical excitation conditions.
Schematics of a discharge-produced plasma EUV source.
Schematics for EUV collect optics of discharge produced plasma (left) and laser-produced plasma sources (right).
Schematic of the ETS EUV lithographic camera.
Top-review resist pattern.
Cross-sectional image of an EUV mask using absorber.
Target technology node and potential extendability of NA and values (Ref. 45).
Top three challenges in EUVL implementation.
2006 AD specifications.
Nominal specifications for EUVL projection optics (six-mirror system).
Intel EUVL resist requirement for 32 and technology nodes (Ref. 189).
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