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On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during etching process
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10.1116/1.2794050
/content/avs/journal/jvstb/25/6/10.1116/1.2794050
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2794050
/content/avs/journal/jvstb/25/6/10.1116/1.2794050
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/content/avs/journal/jvstb/25/6/10.1116/1.2794050
2007-10-12
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2794050
10.1116/1.2794050
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