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On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during etching process
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10.1116/1.2794050
/content/avs/journal/jvstb/25/6/10.1116/1.2794050
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2794050
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Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of on-wafer monitor to measure charge potential [(a) top view and (b) side view] and (c) the cross-sectional SEM image showing fabricated contact-hole structures in the on-wafer monitor.

Image of FIG. 2.
FIG. 2.

Schematic diagram of experimental apparatus with inductively coupled plasma and an on-wafer probe.

Image of FIG. 3.
FIG. 3.

Experimental flow for estimating the sidewall conductivity of contact holes: (a) initial contact holes, (b) polymer deposition in the contact holes, (c) ion bombardment on the deposited polymer in the contact holes, and (d) measurement of the electric current flowing through the sidewall surfaces.

Image of FIG. 4.
FIG. 4.

Electrical potentials at the top and bottom electrodes: (a) aspect ; (b) aspect .

Image of FIG. 5.
FIG. 5.

Electric potential difference between the top and bottom electrodes: (a) aspect ; (b) aspect .

Image of FIG. 6.
FIG. 6.

Mechanism of charge accumulation difference in high-aspect-ratio and low-aspect-ratio contact holes.

Image of FIG. 7.
FIG. 7.

Time variation of electric potential difference between top and bottom electrodes in continuous wave (cw) and pulse-time-modulated (TM) plasma at aspect ratios of (a) 5 and (b) 15.

Image of FIG. 8.
FIG. 8.

Mechanism of charge accumulation during TM operation.

Image of FIG. 9.
FIG. 9.

Sidewall current of contact holes with aspect ratios of (a) 5 and (b) 15.

Image of FIG. 10.
FIG. 10.

Electric conductivity, calculated from sidewall currents, of the fluorocarbon polymer deposited on the sidewalls of contact holes with aspect ratios of (a) 5 and (b) 15.

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/content/avs/journal/jvstb/25/6/10.1116/1.2794050
2007-10-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/25/6/10.1116/1.2794050
10.1116/1.2794050
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