On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during etching process
Schematic diagram of on-wafer monitor to measure charge potential [(a) top view and (b) side view] and (c) the cross-sectional SEM image showing fabricated contact-hole structures in the on-wafer monitor.
Schematic diagram of experimental apparatus with inductively coupled plasma and an on-wafer probe.
Experimental flow for estimating the sidewall conductivity of contact holes: (a) initial contact holes, (b) polymer deposition in the contact holes, (c) ion bombardment on the deposited polymer in the contact holes, and (d) measurement of the electric current flowing through the sidewall surfaces.
Electrical potentials at the top and bottom electrodes: (a) aspect ; (b) aspect .
Electric potential difference between the top and bottom electrodes: (a) aspect ; (b) aspect .
Mechanism of charge accumulation difference in high-aspect-ratio and low-aspect-ratio contact holes.
Time variation of electric potential difference between top and bottom electrodes in continuous wave (cw) and pulse-time-modulated (TM) plasma at aspect ratios of (a) 5 and (b) 15.
Mechanism of charge accumulation during TM operation.
Sidewall current of contact holes with aspect ratios of (a) 5 and (b) 15.
Electric conductivity, calculated from sidewall currents, of the fluorocarbon polymer deposited on the sidewalls of contact holes with aspect ratios of (a) 5 and (b) 15.
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